Bipolar (BJT) Transistor NPN V 1A 2W Through Hole TOAB. Collector-Emitter sustaining voltage-. VCEO(sus). = 60V (Minimum) – TIP29A, TIP30A. = V (Minimum) – TIP29C, TIP30C. • Collector-Emitter saturation voltage. Characteristics of the TIP29C bipolar transistor. Type – n-p-n; Collector-Emitter Voltage: V; Collector-Base Voltage: V; Emitter-Base Voltage: 5 V.
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TIP29C: 1.0 A, 100 V NPN Bipolar Power Transistor
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The Bipolar Power Transistor is designed for use in general purpose amplifier and switching applications.
TIP29C Datasheet, Equivalent, Cross Reference Search. Transistor Catalog
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TIP29C: A, V NPN Bipolar Power Transistor
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